NE461M02-T1-AZ

Overview

The NE461M02 is an NPN epitaxial silicon transistor designed for high-frequency, low-distortion amplifier applications. It features a maximum collector current of 250 mA and total power dissipation of 2.0 W. Key electrical parameters at VCE = 10 V and IC = 50 mA include a DC current gain (hFE) ranging from 40 to 200, insertion power gain (|S21E|^2) between 7.0 and 8.3 dB at 1 GHz, and noise figures of 1.5 to 3.5 dB at 500 MHz. The device provides typical output power of 27 dBm at 1 GHz compression and IP3 of 37 dBm.

Feature Summary

• High dynamic range with low intermodulation distortion suitable for medium power RF amplification
• Utilizes titanium, platinum, gold metallization and direct nitride passivation for reliability
• Optimized for low noise performance in the VHF to UHF frequency bands

Applications

• Low noise amplifiers in the VHF to UHF band
• CATV system components
• Telecommunication equipment requiring high linearity

Procurement Notes

Verify the specific ordering suffix against the manufacturer's RoHS compliance documentation. The -A suffix indicates lead-free devices, while -AZ designates lead-containing devices exempted under EU directives. Confirm that terminal plating meets lead-free requirements regardless of the internal die composition.

Selection Notes

Select this component for designs requiring high linearity and moderate power handling in the VHF/UHF spectrum. Ensure biasing circuits maintain VCE within the 15 V limit and IC below 250 mA. Verify thermal management capabilities to support the 2.0 W power dissipation rating on appropriate substrates.

Part Context

This part is distributed by California Eastern Laboratories (CEL) and corresponds to the EIAJ registered number 2SC5337. It utilizes the M02 package outline, also known as SOT-89 type. The device was originally developed by NEC for use in RF and microwave semiconductor applications.

Replacement Considerations

The EIAJ registered equivalent is 2SC5337. Verify pinout compatibility and thermal resistance characteristics before substitution. Cross-reference scattering parameters and gain bandwidth product to ensure circuit stability.