NE462M02-T1-AZ

Overview

The NE462M02-T1-AZ is an NPN silicon RF bipolar transistor manufactured by CEL. It is engineered for high-frequency applications up to 6 GHz, offering a noise figure of 2.3 dB. The device utilizes a surface-mount package suitable for automated assembly in compact electronic designs.

Feature Summary

• NPN silicon construction optimized for radio frequency signal processing
• Low noise performance supporting sensitive receiver front-ends
• Surface-mount form factor enabling integration into space-constrained PCB layouts

Applications

• RF amplifier stages in communication systems
• Low-noise amplification in wireless infrastructure
• Signal processing components operating within the 6 GHz spectrum

Procurement Notes

Verify the manufacturer designation and exact part number against official CEL documentation before procurement. Confirm that the suffix corresponds to the intended packaging and material specifications. Ensure compatibility with required RF performance metrics for the specific circuit design.

Selection Notes

Select this component when a low noise figure at 6 GHz is critical. Evaluate thermal management requirements based on the surface-mount package constraints. Compare electrical characteristics against alternative RF transistors to ensure optimal system performance and impedance matching.

Part Context

This component belongs to CEL's portfolio of RF bipolar transistors designed for microwave and millimeter-wave applications. It serves as a specialized active element for high-frequency signal integrity in modern telecommunications hardware.