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Product Detailed Parameters
- Description：RF TRANS NPN 5V SOT-343
- Series：-
- Mfr：CEL
- Package：Bulk
- Transistor Type：NPN
- Voltage - Collector Emitter Breakdown (Max)：5V
- Frequency - Transition：-
- Noise Figure (dB Typ @ f)：1dB ~ 1.5dB @ 2GHz
- Gain：14dB ~ 16dB
- Power - Max：150mW
- DC Current Gain (hFE) (Min) @ Ic, Vce：100 @ 3mA, 2V
- Current - Collector (Ic) (Max)：40mA
- Operating Temperature：125°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SC-82A, SOT-343
- Supplier Device Package：SOT-343
- Grade：-
- Qualification：-
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Overview
The NE52418-A is an NPN GaAs HBT (InGaP) low noise amplifier designed for L/S band mobile communications front ends. It features a 4-pin Super Mini Mold package suitable for high-density designs. Key electrical characteristics at VCE = 2 V, IC = 3 mA include a typical associated gain of 16 dB and a noise figure of 1.0 dB at 2 GHz. The device supports a maximum collector current of 40 mA and total power dissipation of 150 mW with a junction temperature rating up to 125°C.
Feature Summary
- High power gain of 16 dB typical at 2 GHz
- Low noise figure of 1.0 dB typical at 2 GHz
- Third-order output intercept point of +25 dBm typical
- Grounded emitter transistor configuration
Applications
- Front end Low Noise Amplifiers (LNAs)
- L-band mobile communications applications
- S-band mobile communications applications
Procurement Notes
Verify the -A suffix indicates lead-free compliance per CEL documentation. Confirm package type matches design requirements as the standard part uses a 4-pin Super Mini Mold. Check for specific ordering suffixes like -T1-A if tape and reel packaging is required instead of bulk supply.
Selection Notes
Select based on bias conditions; performance varies significantly between IC levels of 3 mA, 10 mA, and 20 mA. Ensure impedance matching networks are designed for 50 Ohm systems. Consider thermal management as the device dissipates up to 150 mW in a small surface mount package.
Part Context
Manufactured by California Eastern Laboratories (CEL), this component is based on technology from NEC Compound Semiconductor Devices, Ltd. It belongs to the family of GaAs HBT transistors optimized for RF amplification in compact form factors.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation.
FAQ
What is the pinout configuration for the NE52418-A?
Pin 1 is Emitter, Pin 2 is Base, Pin 3 is Emitter, and Pin 4 is Collector.
Does the -A suffix change the electrical function?
No, the -A suffix indicates lead-free compliance and does not alter the device's electrical characteristics or function.
What is the recommended operating voltage range?
The recommended operating collector-to-emitter voltage (VCE) ranges from 1.5 V to 3.0 V, with a typical value of 2.0 V.
