NE5511279A-T1-A

Overview

The NE5511279A-T1-A is an N-Channel Silicon RF MOSFET transistor manufactured by CEL. It operates in the L/S Band with a continuous drain current of 600 mA and a drain-source breakdown voltage of 15 V. The device features a minimum forward transconductance of 0.0013 S and a power dissipation rating of 12.5 W. It utilizes a 79A-4 surface-mount package and supports a gate-source voltage of +5 V.

Feature Summary

• N-Channel silicon construction for RF applications
• Surface-mount 79A-4 package design
• +5 V gate-source voltage operation

Applications

• L/S Band RF power amplification
• Medium power RF circuit integration

Procurement Notes

Verify component authenticity through authorized CEL distributors or certified suppliers. Confirm RoHS compliance status via official documentation. Check for obsolescence notices as the product lifecycle status may indicate end-of-life conditions. Ensure handling procedures match SMD requirements for the 79A-4 package to prevent damage during assembly.

Selection Notes

Select this component for designs requiring L/S Band RF performance with specific 15 V breakdown limits. Evaluate thermal management capabilities against the 12.5 W dissipation rating. Compare the 600 mA current capability against load requirements. Verify compatibility with +5 V drive signals and 79A-4 footprint constraints within the target PCB layout.

Part Context

This part belongs to the CEL NE55 series of RF MOSFET transistors designed for medium-power applications. The series typically includes variants optimized for different frequency bands and power levels, sharing common packaging standards like the 79A-4 form factor. These devices are engineered for linear RF amplification tasks in communication systems.

Replacement Considerations

Consult official CEL substitution guides for verified equivalents. Cross-reference specifications such as Vds, Id, and package type when evaluating alternatives. No public substitute part numbers are confirmed for this specific model.