NE5520379A-T1A-A

Description：FET RF 15V 915MHZ 79A-PKG
Series：-

SKU:cb4745fd425e Category: RF FETs, MOSFETs Brand: CEL

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Product introduction

Product Detailed Parameters

Description：FET RF 15V 915MHZ 79A-PKG
Series：-
Mfr：CEL
Package：Cut Tape (CT)
Technology：LDMOS
Frequency：915MHz
Gain：16dB
Voltage - Test：3.2 V
Current Rating (Amps)：1.5A
Noise Figure：-
Current - Test：-
Power - Output：35.5dBm
Voltage - Rated：15 V
Grade：-
Qualification：-
Mounting Type：-
Package / Case：4-SMD, Flat Leads
Supplier Device Package：79A
Configuration：-

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NE5520379A-T1A-A

Overview

The NE5520379A-T1A-A is an N-Channel RF MOSFET transistor manufactured by CEL. It utilizes Silicon technology and operates at a frequency of 915 MHz. The device features a continuous drain current of 1.5 A and a drain-source breakdown voltage of 15 V. It provides a gain of 16 dB with a minimum forward transconductance of 2.5 S. Power dissipation is rated at 20 W, and the gate-source voltage is +5 V. The component supports surface mount installation in a 79A-4 package, functioning within a temperature range of -65 C to +125 C.

Feature Summary

Designed for RF applications using LD-MOSFET technology
Capable of operation at 915 MHz frequencies
Supports surface mount installation methods

Applications

RF power amplification circuits
Wireless communication systems operating at 915 MHz
Industrial scientific and medical (ISM) band equipment

Procurement Notes

Verify component authenticity through authorized channels as this part is marked as obsolete or discontinued. Confirm specific lot codes and manufacturing dates against current inventory sources. Ensure compliance with RoHS requirements before integration. Cross-reference datasheet revisions to confirm parameter consistency with original specifications.

Selection Notes

Evaluate thermal management capabilities given the 20 W power dissipation rating. Verify that the 15 V drain-source breakdown voltage aligns with circuit requirements. Consider the 79A-4 package dimensions for PCB layout compatibility. Assess availability constraints due to the discontinued status when planning long-term production cycles.

Part Context

This component belongs to the RF MOSFET transistor category produced by CEL. It is specifically categorized under L&S Band LD-MOSFET devices intended for radio frequency applications. The product falls within the broader semiconductor classification of silicon-based field-effect transistors designed for high-frequency signal processing.