NE5531079A-T1A-A

Overview

The NE5531079A-T1A-A is an RF MOSFET transistor manufactured by CEL. It is a silicon N-channel LDMO device designed for ultra-high frequency band applications. The component features a lead-free package with dimensions of 5.70 x 5.70 mm and a height of 1.10 mm. It utilizes a four-terminal surface-mount configuration suitable for high-frequency circuit integration.

Feature Summary

• Utilizes LDMO technology for ultra-high frequency performance
• N-channel silicon construction
• Lead-free package design

Applications

• Ultra-high frequency band circuits
• RF power amplification
• High-frequency signal processing

Procurement Notes

Verify the manufacturer designation against official CEL documentation to confirm the specific part number variant. Ensure the package dimensions and terminal count match the required schematic footprint. Cross-reference the lead-free status with current environmental compliance standards before finalizing procurement specifications.

Selection Notes

Select this component based on its suitability for ultra-high frequency operations requiring N-channel silicon LDMO technology. Confirm that the physical package dimensions align with the available board space. Verify that the thermal and electrical characteristics meet the specific requirements of the target RF application environment.

Part Context

This component belongs to the category of RF MOSFET transistors. It is specifically engineered for ultra-high frequency band applications. The device represents a silicon-based solution utilizing N-channel metal-oxide semiconductor field-effect transistor architecture within a compact surface-mount package.