NE5550279A-A

Overview

The NE5550279A-A is a silicon power LDMOS FET manufactured by CEL. It delivers high output power of 33.0 dBm typical at VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, and Pin = 15 dBm. The device features high power added efficiency. It operates with a drain voltage of 7.5 V and supports frequencies up to 900 MHz. The component is designed for robust RF power amplification in communication systems.

Feature Summary

• High output power capability
• High power added efficiency
• Silicon LDMOS technology

Applications

• 150 MHz Band Radio System
• 460 MHz Band Radio System
• VHF to UHF-BAND Class-AB power amplifier

Procurement Notes

Verify the specific suffix (e.g., -T1, -AZ) against your bill of materials, as these indicate variations in tape-and-reel packaging or testing conditions. Confirm that the 7.5 V operating requirement aligns with your system design. Check current status as some variants may be obsolete. Ensure thermal management meets LDMOS requirements.

Selection Notes

Select this part for applications requiring high efficiency at VHF/UHF frequencies. Compare gain and linearity requirements against alternative LDMOS devices. Consider the 7.5 V supply constraint versus higher voltage options like the 30V series if system architecture allows. Evaluate thermal resistance for the intended enclosure.

Part Context

This component belongs to the CEL NE5550 series of silicon power LDMOS field-effect transistors. These devices are engineered for broadband RF power amplification. The series includes various models optimized for different frequency bands and power levels, serving as core active elements in professional radio infrastructure.

Replacement Considerations

Public confirmed substitutes include NE5550279A-T1 and NE5550279A-T1-A. Verify pinout compatibility and electrical parameters before substitution. Note that suffixes denote packaging or test condition differences rather than functional changes.