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The NE66219-A is an NPN RF bipolar junction transistor manufactured by CEL. It operates at a frequency of 21 GHz with a maximum collector-emitter breakdown voltage of 3.3V. The device supports a continuous collector current of 35 mA and dissipates up to 115 mW of power. Key electrical characteristics include an emitter-base voltage (VEBO) of 1.5 V and a minimum DC current gain (HFE) of 60 at 5 mA and 2 V. It functions within a temperature range starting from -65°C and utilizes the SOT-523 surface-mount package.
Verify the specific ordering suffix, such as -T1-A, against your bill of materials, as it may indicate tape-and-reel packaging or obsolete status. Confirm RoHS compliance and lead times with authorized distributors. Ensure the component matches the required SOT-523 footprint and thermal specifications for your PCB layout.
Select this component when designing low-voltage RF stages requiring high transition frequencies. The 3.3V rating suits modern portable electronics. Compare HFE and noise figure requirements against circuit needs. Ensure the SOT-523 package fits the assembly constraints. Validate thermal management for 115mW dissipation in the target environment.
This part belongs to CEL's portfolio of RF bipolar transistors designed for high-speed switching and amplification. It complements other high-frequency devices in the series, offering consistent performance metrics for RF front-end modules. The NE66219 series provides standardized solutions for wireless infrastructure and consumer RF applications.
Check for direct substitutes like the 2SC5606 if pin compatibility is critical. Verify that alternative parts match the 21 GHz transition frequency and 3.3V breakdown voltage. Ensure the replacement maintains the SOT-523 form factor and NPN configuration to avoid redesigning the circuit board.