NE664M04-A

Overview

The NE664M04-A is a silicon NPN RF bipolar transistor designed for high-power amplification applications up to 6 GHz. It operates with a maximum collector-emitter voltage of 5 V and supports a continuous collector current of 500 mA. The device features a transition frequency (fT) of 20 GHz at a test frequency of 2 GHz, providing a typical linear gain of 12 dB. It delivers an output power of +26 dBm in a 3.6 V configuration. The component is housed in an M04 package, equivalent to the SOT-343F form factor.

Feature Summary

• High-output power capability for RF signal amplification
• Silicon NPN technology optimized for broadband performance
• Integrated thermal management within a compact surface-mount footprint

Applications

• Wireless LAN access points
• Mobile communication infrastructure
• Broadband wireless systems

Procurement Notes

Verify JEITA equivalent part number 2SC5754 against official CEL documentation. Confirm that the -A suffix does not alter electrical characteristics or pinout compared to the standard NE664M04. Ensure compliance with RoHS directives prior to integration into final assemblies.

Selection Notes

Select this component when designing circuits requiring +26 dBm output power at 3.6 V supply. The 500 mA current rating supports high-drive requirements. Verify that the M04 package dimensions align with the target PCB layout constraints.

Part Context

This discrete transistor belongs to CEL's Silicon Bipolar Transistors portfolio. It complements low-noise variants like the NE662M04 by offering higher power handling capabilities for front-end power amplifier stages in multi-band wireless devices.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided source material.