NE664M04-T2-A

Overview

The NE664M04-T2-A is a silicon NPN RF discrete transistor manufactured by CEL. It operates at frequencies up to 6 GHz and is designed for power amplification applications. The device features a maximum collector-emitter voltage of 5 V and a continuous collector current rating of 500 mA. Key electrical characteristics include a typical transition frequency (fT) of 20 GHz, measured at a test frequency of 2 GHz with a VCE of 3 V. The component utilizes the M04 package style, which corresponds to the SOT-343F footprint.

Feature Summary

• High-frequency operation capability suitable for broadband RF applications
• Designed for high-power output stages in wireless communication systems
• Utilizes silicon technology for robust performance

Applications

• Power amplifier modules for wireless infrastructure
• Broadband RF signal generation circuits
• Wireless communication base stations

Procurement Notes

Verify the specific ordering suffix against official manufacturer documentation to confirm tape-and-reel packaging specifications. Confirm RoHS compliance status through the latest datasheet revision. Ensure the M04 package dimensions match the target PCB layout requirements before finalizing procurement orders.

Selection Notes

Select this component when designing circuits requiring high linearity and significant output power within the sub-6 GHz spectrum. Evaluate thermal management strategies due to the high current handling capabilities. Compare fT and gain metrics against alternative devices if lower noise figures are required for front-end low-noise amplifier stages.

Part Context

This part belongs to the CEL silicon bipolar transistor family, specifically engineered for radio frequency applications. It serves as a discrete solution for power amplification tasks where integrated MMICs may not provide sufficient output power or flexibility. The M04 package allows for surface-mount integration into compact RF designs.

Replacement Considerations

The JEITA equivalent part number is 2SC5754. Verify pinout compatibility and thermal resistance parameters when substituting with other NPN silicon RF transistors from different manufacturers.