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The NE67818-T1-A is an NPN silicon RF bipolar transistor manufactured by CEL, designed for high-frequency applications up to 12 GHz. It features a maximum collector-emitter breakdown voltage of 6V and a transition frequency of 12 GHz. The device offers a typical noise figure of 1.7 dB at 2 GHz and provides a gain of 13 dB. With a maximum power dissipation of 200 mW and a continuous collector current of 100 mA, it supports DC current gains (hFE) of at least 75 at 30 mA and 3V. The component operates with a junction temperature up to 150°C and is housed in an SC-82A (SOT-343) surface-mount package.
Verify the obsolete status and availability through authorized distributors. Confirm that the SC-82A package dimensions match the target PCB footprint. Ensure the 6V voltage rating meets the circuit requirements. Check for lead-free compliance if required by assembly standards. Validate thermal management capabilities given the 200 mW power dissipation limit.
Select this component when a low-noise NPN silicon transistor is needed for frequencies around 2 GHz to 12 GHz. Compare the 1.7 dB noise figure against alternatives if signal integrity is critical. Consider the 6V breakdown voltage for supply rail compatibility. Evaluate the SOT-343 package size against board space constraints. Verify that the 100 mA current rating suffices for the intended bias conditions.
This part belongs to CEL's portfolio of RF bipolar transistors, originally derived from NEC/Renesas technology. It serves as a specialized discrete component for high-frequency analog and RF design. The T1-A suffix typically indicates specific tape-and-reel packaging or testing criteria defined by the manufacturer for automated assembly processes.
Publicly confirmed substitute part numbers are not available in the provided documentation. Designers should consult official replacement guides or contact the manufacturer directly for qualified alternatives.