NE678M04-A

Overview

The NE678M04 is a medium power NPN silicon high frequency transistor fabricated using NEC's HFT3 wafer process. It features a transition frequency of 12 GHz and operates effectively from 100 MHz to 3 GHz. The device provides an output power at 1 dB compression (P1dB) of 18 dBm at 1.8 GHz with low voltage and current requirements. Key electrical characteristics include a linear gain of 13 dB at 1.8 GHz, a maximum available gain of 13.5 dB at 2 GHz, and a noise figure ranging from 1.7 to 2.5 dB at 2 GHz. Absolute maximum ratings specify a collector-to-base voltage of 9.0 V, collector-to-emitter voltage of 6.0 V, and total power dissipation of 205 mW.

Feature Summary

• High gain bandwidth product of 12 GHz for wideband RF applications
• High output power capability of 18 dBm at 1.8 GHz under low bias conditions
• New low profile M04 package design with flat leads for improved RF performance

Applications

• Driver stage for mobile wireless systems
• Driver stage for fixed wireless applications
• RF amplification in the 100 MHz to 3 GHz range

Procurement Notes

Verify the specific ordering suffix when purchasing. The base part number NE678M04 corresponds to standard packaging, while the suffix -T2-A indicates a reel quantity of 3000 pieces. Confirm that the -A suffix denotes lead-free compliance as per CEL certification. Ensure the procurement documentation matches the required RoHS directive standards before finalizing orders.

Selection Notes

Select this component for designs requiring high linearity and gain in the UHF and microwave bands. The device is optimized for driver stages where moderate output power is needed without excessive bias current. Consider the SOT-343 footprint compatibility during PCB layout. Verify thermal management capabilities against the specified junction-to-ambient thermal resistance of 600 °C/W on the recommended glass epoxy PCB.

Part Context

This transistor is distributed by California Eastern Laboratories (CEL), which serves as the exclusive North American agent for NEC RF, microwave, and optoelectronic semiconductors. The device utilizes NEC's proprietary HFT3 wafer process technology. The datasheet was originally published by NEC and later maintained by CEL, reflecting the transition in distribution rights for these specific RF components.

Replacement Considerations

The EIAJ3 registration number for this device is 2SC5753. This designation may be used to identify equivalent or cross-referenced parts within Japanese industrial standards. Verify pinout compatibility and electrical parameters carefully when substituting with other NPN RF transistors in the same package style.