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The CEL NE68018 is a silicon NPN single transistor designed for RF applications up to 2 GHz. It features a typical transition frequency (fT) of 10 GHz and a maximum collector-emitter voltage (VCEO) of 10 V. The device supports a maximum collector current (Ic) of 35 mA with a typical DC current gain (hFE) of 13 at 2 GHz. Packaged in the compact SOT-343F form factor, it operates with a test voltage of 6 V and a test current of 2 mA.
Verify the specific ordering suffix against manufacturer documentation to confirm exact mechanical dimensions and tape-and-reel specifications. Ensure compatibility with standard SOT-343F footprint requirements during PCB layout. Confirm that the selected variant meets all required thermal dissipation limits for the intended operating environment.
Select this component when a silicon NPN transistor with a 10 GHz fT is required for frequencies up to 2 GHz. Compare the 35 mA maximum collector current limit against circuit load requirements. Evaluate the 10 V breakdown voltage against peak signal swings to ensure reliable operation without exceeding absolute maximum ratings.
This part belongs to the CEL silicon bipolar transistor portfolio, specifically categorized under single transistors. It serves as an alternative to other discrete RF devices within the same frequency range. The product line focuses on providing stable supply solutions for RF, wireless, and optical markets requiring reliable semiconductor components.
The datasheet lists the JEITA equivalent part number as 2SC5013. Verify pinout compatibility and electrical parameter overlaps before substitution. Ensure the replacement device matches the SOT-343F package dimensions to maintain mechanical fit.