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The NE68019-T1 is an NPN silicon high-frequency transistor from the NE680 series, designed for low noise and high gain applications up to 6 GHz. It features a gain bandwidth product (fT) of 10 GHz at VCE = 6 V and IC = 10 mA. The device supports a maximum collector current of 35 mA and operates with a collector-emitter voltage of 10 V. Key electrical characteristics include a noise figure of 1.7 dB at 2 GHz and 2.6 dB at 4 GHz, with associated gains of 12.5 dB and 8.0 dB respectively. It utilizes a 3-pin Ultra Super Mini Mold plastic package.
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm that the specific ordering suffix matches the required package style and lead-free specifications. Request original datasheets to validate electrical parameters against current production standards before integration into final designs.
Select this component when low noise performance and high gain are critical requirements within the S-band and C-band frequencies. Ensure the biasing circuit supports the specified low voltage and current operating points to maximize efficiency. Consider thermal management capabilities relative to the total power dissipation limits defined in the absolute maximum ratings section.
This part belongs to the NE680 series of NPN epitaxial silicon transistors manufactured by California Eastern Laboratories (CEL). The series includes various package options such as chip, SOT-343, and SOT-23 styles. While the NE680 series is noted for cost-effective high-frequency performance, certain variants may be marked as not recommended for new designs.
Consult the manufacturer's sales office for details on obsolete or restricted parts within the NE680 series. Cross-reference with the NE681 series if higher collector current capabilities are required for the application.