NE68030-A

Overview

The CEL NE68030-A is a silicon NPN single transistor with an fT of 8 GHz. It operates at VCEO of 10V and IC max of 35mA in a SOT-323 package. Typical noise figure is 1.9 dB at 2 GHz, with MAG of 11.5 dB.

Feature Summary

• Silicon NPN bipolar junction transistor
• High frequency operation up to 8 GHz
• Low noise performance for RF applications

Applications

• RF amplification stages
• Low noise amplifier circuits
• Wireless communication systems

Procurement Notes

Verify the JEITA equivalent part number 2SC4228 against your component requirements. Confirm the SOT-323 package dimensions match your PCB layout constraints before finalizing procurement decisions.

Selection Notes

Select this component for designs requiring low noise figures around 1.9 dB at 2 GHz. Ensure the operating current stays within the 35 mA maximum limit and the voltage rating does not exceed 10 V for reliable performance.

Part Context

This device belongs to CEL's silicon bipolar transistor portfolio, specifically designed for high-frequency applications. It serves as a discrete solution for RF signal processing tasks where low noise and moderate gain are critical requirements.

Replacement Considerations

The JEITA equivalent part number is 2SC4228. Verify pinout compatibility and electrical specifications before substituting with other NPN transistors in the same frequency range.

FAQ

What is the typical noise figure of the NE68030-A?

The typical noise figure is 1.9 dB when tested at 2 GHz.

What is the maximum collector-emitter voltage?

The maximum collector-emitter voltage (VCEO) is 10 V.

Which package style does the NE68030-A use?

It uses the SOT-323 package style.