NE68039-A

Overview

The NE68039-A is a silicon NPN RF bipolar transistor manufactured by CEL. It operates with a maximum transition frequency of 10 GHz and is housed in a SOT-143 package (Package Code 39). The device supports a maximum collector-emitter voltage of 10 V and a maximum collector current of 35 mA. Typical specifications at 2 GHz include a noise figure of 1.8 dB, a maximum available gain of 12 dB, and a DC current gain of 100.

Feature Summary

• Silicon NPN construction optimized for RF applications
• SOT-143 surface-mount packaging for compact integration
• Designed for low-noise amplification and signal processing

Applications

• Low Noise Amplifiers (LNAs)
• RF signal conditioning circuits
• Wireless communication front ends

Procurement Notes

Verify the specific manufacturer datasheet to confirm detailed electrical limits and thermal characteristics before finalizing designs. Ensure that the selected operating conditions remain within the absolute maximum ratings defined in the official documentation to maintain component reliability.

Selection Notes

Select this component when a silicon NPN transistor with a 10 GHz transition frequency is required in a small SOT-143 footprint. Consider the typical noise figure and gain specifications against system requirements for low-noise amplification stages operating around 2 GHz.

Part Context

This part belongs to the CEL silicon bipolar transistor portfolio, specifically designed for radio frequency applications. It serves as a discrete active component for amplification tasks within wireless systems, complementing other RFICs and GaAs devices offered by the manufacturer.

Replacement Considerations

The JEITA equivalent part number is 2SC4095. Verify pinout compatibility and electrical parameters against the original design requirements before substituting.