NE68039-T1-A

Overview

The NE68039-T1-A is an NPN epitaxial silicon transistor manufactured by CEL, designed for low-noise and small signal amplifier applications in the VHF range. It operates as a high-frequency RF component with a maximum collector-emitter voltage of 10V and a continuous collector current rating of 35mA. The device supports operation up to 10GHz and features a power dissipation capacity of 200mW. It is housed in a surface-mount SOT-143 package.

Feature Summary

• Designed for low-noise performance in VHF frequency ranges
• Optimized for small signal amplification tasks
• Capable of high-frequency operation up to 10GHz

Applications

• Low-noise amplifiers
• Small signal amplifiers
• VHF radio frequency circuits

Procurement Notes

Verify the specific suffix (e.g., -T1-A) against official datasheets to confirm packaging and tape-and-reel specifications. Ensure the component matches the required NPN epitaxial silicon construction for VHF low-noise applications. Cross-reference the manufacturer designation (CEL) with authorized distributors to guarantee authenticity and traceability.

Selection Notes

Select this component when designing circuits requiring low noise figures at VHF frequencies. Consider the 10V voltage limit and 35mA current capability during biasing. The SOT-143 package dictates PCB layout constraints. Evaluate thermal management needs given the 200mW power dissipation rating for the intended application environment.

Part Context

This part belongs to the family of NPN silicon transistors from CEL, often cross-referenced with equivalent designs like the 2SC4095. It serves as a specialized discrete semiconductor device for analog RF front-ends, distinct from general-purpose switching transistors due to its optimized high-frequency characteristics.

Replacement Considerations

Public documentation indicates the 2SC4095 as a related or equivalent part number. Verify pinout compatibility and electrical parameter equivalence before substitution. Consult official replacement guides to ensure functional parity in VHF low-noise amplifier designs.