NE68118-A

Overview

The NE68118-A is an NPN silicon RF bipolar transistor manufactured by CEL. It features a typical transition frequency (fT) of 9 GHz and operates with a maximum collector-emitter voltage (VCEO) of 10 V. The device supports a maximum continuous collector current of 65 mA and is housed in an SOT-343F package, designated as Package Code 18. At a test frequency of 1 GHz and VCE of 8 V, it exhibits a typical noise figure of 1.2 dB, a maximum available gain (MAG) of 18 dB, and a DC current gain (hFE) of 100.

Feature Summary

• Designed for high-frequency RF applications up to 9 GHz
• Optimized for low-noise performance in receiver front ends
• Suitable for ISM band and wireless connectivity systems

Applications

• Low Noise Amplifiers (LNAs)
• RF Receiver Front Ends
• ISM Band Applications

Procurement Notes

Verify the specific ordering suffix against official manufacturer documentation to confirm exact electrical tolerances and packaging variations. Confirm RoHS compliance status directly with the supplier or datasheet before integration into production designs.

Selection Notes

Select this component when a small SOT-343F footprint is required for NPN RF amplification. Ensure the design accommodates the 10 V maximum voltage rating and 65 mA current limit while targeting frequencies near 1 GHz for optimal noise and gain characteristics.

Part Context

This part belongs to the Silicon Bipolar Transistors category within the CEL product portfolio. It serves as a discrete building block for RF circuits, distinct from integrated MMICs or GaAs FETs listed in the same brochure.

Replacement Considerations

The NEC 2SC5012 is the JEITA equivalent part number for the NE68118. Verify pinout compatibility and parameter matching if substituting with other NPN transistors in the NE681xx series.