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The NE68119-T1-A is an RF small signal bipolar transistor manufactured by CEL, originally designed by NEC. It is a silicon NPN device configured for single-element operation in the S Band frequency range. The component features a maximum collector current of 0.065 A and a collector-emitter voltage rating of 10 V. Key electrical characteristics include a maximum collector capacitance of 0.9 pF. It is housed in a lead-free Ultra Super Minimold plastic package with three terminals, suitable for surface mount applications.
Verify the manufacturer designation carefully, as this component was originally produced by NEC and is now distributed by CEL. Confirm that the specific ordering suffix matches the required package type and lead-free compliance status. Ensure the datasheet provided corresponds to the exact part number to avoid discrepancies in electrical parameters or pin configurations during integration.
Select this component when designing circuits requiring an NPN bipolar transistor specifically optimized for S Band frequencies. Consider the 0.065 A collector current limit and 10 V breakdown voltage when determining biasing conditions. The small outline plastic package requires appropriate PCB footprint design for surface mount technology implementation.
This component belongs to the family of RF small signal bipolar transistors historically developed by NEC. It represents a specialized discrete semiconductor device intended for high-frequency analog applications. The transition from NEC to CEL distribution reflects changes in product line management while maintaining the original technical specifications defined by the initial manufacturer.
Publicly confirmed substitute part numbers are not available in the verified source material. Engineers should consult official cross-reference guides or contact the manufacturer directly for compatible alternatives that match the S Band performance and package constraints.