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Product Detailed Parameters
- Description：RF TRANS NPN 10V 7GHZ SOT-323
- Series：-
- Mfr：CEL
- Package：Bulk
- Transistor Type：NPN
- Voltage - Collector Emitter Breakdown (Max)：10V
- Frequency - Transition：7GHz
- Noise Figure (dB Typ @ f)：1.4dB @ 1GHz
- Gain：9dB
- Power - Max：150mW
- DC Current Gain (hFE) (Min) @ Ic, Vce：40 @ 7mA, 3V
- Current - Collector (Ic) (Max)：65mA
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SC-70, SOT-323
- Supplier Device Package：SOT-323
- Grade：-
- Qualification：-
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Overview
The NE68130-A is an NPN epitaxial silicon high-frequency transistor from the CEL NE681 series, housed in a SOT-323 style package (outline 30). It is designed for low noise and high gain amplifier applications up to 4 GHz. Key electrical characteristics include a gain bandwidth product of 7.0 GHz at VCE=3V/IC=7mA, a noise figure of 1.5 dB at 1 GHz, and an associated gain of 14 dB at 1 GHz. The device supports a collector current of 65 mA with a maximum power dissipation of 150 mW.
Feature Summary
- Optimized for simultaneous low noise and high gain using a single matching point
- Suitable for amplifier applications operating up to 4 GHz
- Available in low-cost plastic surface mount packaging
Applications
- Low noise amplifiers
- High gain RF amplifiers
- Microwave circuit design
Procurement Notes
Verify component authenticity by checking manufacturer markings against official datasheet specifications. Confirm package outline number 30 corresponds to the SOT-323 style. Ensure the part meets RoHS requirements if applicable to your assembly process. Cross-reference with EIAJ registered number 2SC4227 for compatibility checks.
Selection Notes
Select this component when designing circuits requiring high frequency performance up to 4 GHz with specific noise figure targets. Consider the 150 mW power dissipation limit and thermal resistance of 833 °C/W for heat management. Evaluate bias conditions (VCE, IC) against typical noise parameters to optimize signal-to-noise ratio for your specific frequency band.
Part Context
The NE68130-A belongs to the NEC/CEL NE681 series of NPN silicon transistors. This family includes various packages such as chip, Micro-X, and several SOT styles. The series is characterized by high gain bandwidth products and low noise figures, making it suitable for RF front-end modules and communication systems requiring efficient signal amplification.
Replacement Considerations
The EIAJ registered number 2SC4227 serves as a direct equivalent identifier for the NE68130-A within the same package outline. Verify pinout compatibility and electrical parameter tolerances before substitution.
