NE68133-T1B-R34-A

$1.70

Description：RF TRANS NPN 10V 9GHZ SOT-23-3
Series：-

SKU:66b0bf199241 Category: Bipolar RF Transistors Brand: CEL

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Product introduction

Product Detailed Parameters

Description：RF TRANS NPN 10V 9GHZ SOT-23-3
Series：-
Mfr：CEL
Package：Tape & Reel (TR)
Transistor Type：NPN
Voltage - Collector Emitter Breakdown (Max)：10V
Frequency - Transition：9GHz
Noise Figure (dB Typ @ f)：1.2dB @ 1GHz
Gain：13dB
Power - Max：200mW
DC Current Gain (hFE) (Min) @ Ic, Vce：80 @ 20mA, 8V
Current - Collector (Ic) (Max)：65mA
Operating Temperature：150°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-236-3, SC-59, SOT-23-3
Supplier Device Package：SOT-23-3
Grade：-
Qualification：-

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NE68133-T1B-R34-A

Overview

The NE68133-T1B-R34-A is an NPN silicon high-frequency transistor from the NE681 series, designed for low noise and high gain amplifier applications. It features a transition frequency (fT) of 8 GHz. The device exhibits a low noise figure of 1.2 dB at 1 GHz and 1.6 dB at 2 GHz. Associated gain is specified at 15 dB at 1 GHz and 12 dB at 2 GHz. The component utilizes a micro-x package style suitable for surface mount assembly.

Feature Summary

Designed for simultaneous low noise and high gain performance using a single matching point
Suitable for amplifier applications operating up to 4 GHz
Utilizes NPN epitaxial silicon construction

Applications

Low noise amplifier circuits
High gain amplifier stages
RF front-end modules

Procurement Notes

Verify the specific suffix -R34-A against official documentation to confirm reel packaging specifications and tape-and-reel dimensions. Ensure the manufacturer designation aligns with current corporate entities following industry acquisitions. Cross-reference the part number with authorized distributors to confirm availability and authenticity before procurement.

Selection Notes

Select this component when a single matching network is required to optimize both noise figure and gain simultaneously. Consider the 8 GHz transition frequency for applications requiring operation near or above 2 GHz. Evaluate the micro-x package constraints for PCB layout and thermal management requirements in high-frequency designs.

Part Context

This transistor belongs to the NE681 series of NPN silicon devices originally developed by NEC. The series is characterized by its ability to achieve low noise and high gain concurrently. The NE68133 variant specifically targets high-frequency amplifier uses. Distribution may involve California Eastern Labs or subsequent entity transitions.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Verify compatibility with existing circuit designs if considering alternative components from other manufacturers.

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Delivery time

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Return and Refund

Returns are accepted within 60 days of invoice with RMA approval. Items must be resalable; original invoice and test report are required. No returns for customer errors.