NE68139-T1-A

Overview

The NE68139-T1-A is an RF small signal field-effect transistor manufactured by CEL (California Eastern Labs). It is a single-element, ultra-high frequency band device constructed from Gallium Arsenide. The component utilizes an N-channel metal semiconductor FET technology housed in a CASE 39 package with four pins. Key electrical specifications include a minimum drain-source breakdown voltage of 13 V and a maximum drain current of 0.04 A. The device features a maximum feedback capacitance of 0.03 pF and operates in dual gate depletion mode. It is designed for low noise applications within the ultra-high frequency spectrum.

Feature Summary

• Utilizes Gallium Arsenide material for ultra-high frequency performance
• Features low noise characteristics suitable for sensitive RF circuits
• Operates as a dual gate depletion mode device

Applications

• Ultra-high frequency band amplification
• Low noise RF signal processing
• Gallium Arsenide based circuit design

Procurement Notes

Verify the specific manufacturer source when sourcing this component, as California Eastern Labs has undergone corporate restructuring and asset acquisitions. Confirm that the part number suffix corresponds to the exact pinout and packaging requirements for your design. Ensure compatibility with existing inventory if replacing older stock, as availability may vary across different distributors holding legacy rights.

Selection Notes

Select this component for designs requiring ultra-high frequency operation with minimal noise interference. The dual gate configuration offers additional control flexibility compared to single-gate alternatives. Consider the 13 V breakdown voltage limit when designing power stages. Verify thermal management needs, as the plastic/epoxy body material supports operation up to 125 °C.

Part Context

This component belongs to the family of RF small signal transistors produced by CEL. These devices are typically employed in high-frequency communication systems where signal integrity is critical. The use of Gallium Arsenide allows for superior performance at frequencies where silicon-based transistors may exhibit higher losses or noise figures.

Replacement Considerations

Direct substitutes should be sought among other manufacturers producing GaAs MESFETs in similar SOT-343 or equivalent small outline packages. Verify that replacement parts maintain the same 4-pin configuration and dual gate depletion mode operation to ensure circuit compatibility without redesign.