NE681M03-A

NE681M03-A

  • Description:RF TRANS NPN 10V 7GHZ M03
  • Series:-

SKU:c7824c54e2b3 Category: Brand:

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Product Detailed Parameters

  • Description:RF TRANS NPN 10V 7GHZ M03
  • Series:-
  • Mfr:CEL
  • Package:Bulk
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):10V
  • Frequency - Transition:7GHz
  • Noise Figure (dB Typ @ f):1.4dB ~ 2.7dB @ 1GHz
  • Gain:-
  • Power - Max:125mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 7mA, 3V
  • Current - Collector (Ic) (Max):65mA
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SOT-623F
  • Supplier Device Package:M03
  • Grade:-
  • Qualification:-

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NE681M03-A

Overview

The NE681M03-A is an NPN silicon RF transistor manufactured by CEL, utilizing the M03 surface-mount package. It features a gain bandwidth product (fT) of up to 7 GHz and a noise figure as low as 1.4 dB at VCE = 3 V and IC = 7 mA. The device supports a collector current of 65 mA with total power dissipation rated at 125 mW. Operating frequencies range from 0.1 to 5.0 GHz under bias conditions of VCE between 2.5 V and 8 V, and IC between 0.3 mA and 20 mA. The suffix -A designates the component as lead-free compliant.

Feature Summary

  • Utilizes the M03 package for minimal outline dimensions and low profile height.
  • Features flat lead style construction optimized for improved RF performance.
  • Designed specifically for low noise and high gain amplifier applications.

Applications

  • Low noise amplifiers in portable wireless devices
  • High gain RF signal processing circuits
  • Amplifier stages operating within the 0.1 to 5.0 GHz frequency range

Procurement Notes

Verify that the specific part number includes the -A suffix to ensure compliance with RoHS directives regarding restricted substances. Confirm the manufacturer source is authorized, as California Eastern Laboratories serves as the exclusive North American agent for NEC RF products. Ensure storage temperature limits are respected during handling.

Selection Notes

Select this component when a small form factor is required alongside high-frequency operation capabilities. The M03 package offers a distinct advantage over larger plastic surface mount styles due to its reduced physical footprint. Evaluate the trade-off between the 125 mW power dissipation limit and the required thermal management for the specific circuit layout.

Part Context

This component belongs to the NE681 series of RF transistors produced by NEC and distributed by CEL. It shares functional similarities with other variants available in chip, Micro-x, and standard plastic packages. The EIAJ registered number for this device is 2SC5433, providing a reference point for legacy documentation or cross-referencing within Japanese industrial standards.

Replacement Considerations

Direct replacements include other parts within the NE681 family such as the NE681M03-T1-A. Verify pinout compatibility and electrical parameters against the original design requirements before substituting with components from different manufacturers.

FAQ

What does the -A suffix indicate on the NE681M03-A?

The -A suffix indicates that the device is lead-free compliant and meets the requirements of EU Directive 2002/95/EC regarding the restriction of hazardous substances.

What is the maximum collector current rating for this transistor?

The absolute maximum rating for the collector current (IC) is 65 mA.

How is the M03 package designed to benefit RF performance?

The M03 package utilizes a flat lead style which is specifically engineered to provide better RF performance compared to traditional lead configurations.

NE681M03-ANE681M03-A

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