NE681M13-A

NE681M13-A

  • Description:RF TRANS NPN 10V 7GHZ M13
  • Series:-

SKU:71554244be36 Category: Brand:

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Product Detailed Parameters

  • Description:RF TRANS NPN 10V 7GHZ M13
  • Series:-
  • Mfr:CEL
  • Package:Bulk
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):10V
  • Frequency - Transition:7GHz
  • Noise Figure (dB Typ @ f):1.4dB ~ 2.7dB @ 1GHz
  • Gain:-
  • Power - Max:140mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 7mA, 3V
  • Current - Collector (Ic) (Max):65mA
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SOT-3
  • Supplier Device Package:M13
  • Grade:-
  • Qualification:-

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NE681M13-A

Overview

The NE681M13-A is an NPN silicon transistor manufactured by California Eastern Laboratories (CEL), representing the NEC NE681 series. It utilizes a miniature M13 package with dimensions of 1.0 x 0.5 x 0.5 mm and a height of 0.50 mm, featuring flat leads for improved RF performance. Key electrical characteristics include a gain bandwidth product (fT) of 7 GHz and a noise figure (NF) of 1.4 dB at VCE = 3 V and IC = 7 mA. The device supports a collector current of 65 mA and total power dissipation of 140 mW.

Feature Summary

  • Ultra-small M13 surface-mount package designed for portable wireless applications
  • High gain bandwidth product suitable for RF amplifier stages
  • Low noise figure optimized for signal integrity in sensitive circuits
  • Flat lead style construction enhancing high-frequency performance

Applications

  • Low noise amplifiers in portable wireless devices
  • RF amplifier stages requiring high gain and low noise
  • Cost-effective amplifier solutions for consumer electronics

Procurement Notes

Verify that the ordering suffix -A confirms Pb-free compliance per EU Directive 2002/95/EC. Confirm the package outline matches the specified M13 dimensions. Ensure the supplier provides documentation verifying the component originates from CEL or authorized distribution channels to guarantee authenticity and traceability.

Selection Notes

Select this component when a compact NPN transistor with high fT and low NF is required for RF applications. Compare against alternatives based on the specific M13 footprint constraints. Evaluate thermal management requirements against the 140 mW power dissipation rating under expected operating conditions.

Part Context

This part is distributed by California Eastern Laboratories (CEL) as the exclusive North American agent for NEC's RF, microwave, and optoelectronic semiconductors. The NE681M13-A corresponds to the EIAJ registered number 2SC5615. The -A suffix specifically denotes RoHS compliance without altering the base electrical function.

Replacement Considerations

Check for direct equivalents in the same M13 package. Verify pinout compatibility (Emitter, Base, Collector). Ensure replacement parts meet the 7 GHz fT and 1.4 dB NF specifications for RF performance parity.

FAQ

What does the -A suffix indicate for the NE681M13?

The -A suffix indicates that the device is Pb-free and compliant with the EU RoHS directive.

What are the physical dimensions of the M13 package?

The M13 package measures 1.0 mm in length, 0.5 mm in width, and has a height of 0.50 mm.

What is the maximum collector current rating?

The absolute maximum collector current (IC) is rated at 65 mA.

NE681M13-ANE681M13-A

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