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The CEL NE68519-A is an NPN silicon high-frequency transistor from the NE685 series, designed for low voltage and low current RF applications. It features a gain bandwidth product (fT) of 12 GHz at VCE = 3V and IC = 10 mA. The device operates with a collector-emitter voltage rating of 6V and a maximum collector current of 30 mA. Electrical characteristics include a minimum noise figure of 1.5 dB at 2.0 GHz and a forward current gain (hFE) ranging from 75 to 150. It utilizes Package Outline 19 (3 Pin Ultra Super Mini Mold) and supports operation up to 2.4 GHz.
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm package outline compatibility with PCB footprints prior to assembly. Ensure proper electrostatic discharge handling procedures are followed during storage and installation to prevent damage to the sensitive semiconductor junctions.
Select this component when designing circuits requiring high frequency operation with minimal power consumption. Evaluate thermal resistance limits against ambient temperature conditions to ensure stable performance. Compare noise parameters and gain specifications against alternative packages within the same series to match specific board space constraints.
This part belongs to the NEC California Eastern Laboratories NE685 series of surface mount NPN silicon transistors. The series includes variants such as NE68518, NE68530, NE68533, and NE68539, which share similar electrical characteristics but differ in physical package outlines and pin configurations to accommodate various layout requirements.
Consult manufacturer documentation for approved substitutes. Verify that any replacement maintains identical package dimensions and pinout assignments to ensure mechanical fit without modifying the existing printed circuit board layout.