NE68530-T1-A

Overview

The NE68530-T1-A is an NPN silicon high-frequency transistor from the CEL NE685 series, housed in a SOT-323 surface-mount package. It features a transition frequency of 12 GHz and a collector-emitter breakdown voltage of 6 V. The device operates with a maximum collector current of 30 mA and total power dissipation of 150 mW. At 2.0 GHz, it provides a minimum noise figure between 1.5 dB and 2.5 dB, an associated gain of 7 to 8.5 dB, and a forward current gain (hFE) ranging from 75 to 150.

Feature Summary

• Designed for low voltage and low current RF applications
• Optimized for very low noise performance at 2.0 GHz
• High gain bandwidth product suitable for portable wireless communications

Applications

• Portable wireless communication devices
• Cellular radio applications
• Low noise amplifier stages up to 2.4 GHz

Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm the specific suffix matches the required package outline and electrical characteristics. Ensure proper ESD handling procedures are followed during storage and assembly due to device sensitivity.

Selection Notes

Select this component for designs requiring high gain and low noise in ultra-small packages. Evaluate thermal resistance constraints for free-air operation versus infinite heat sink conditions. Consider biasing requirements for optimal noise figure and gain trade-offs within the specified voltage and current limits.

Part Context

This part belongs to the NEC/CEL NE685 series of surface mount NPN transistors. The series includes variants like NE68518, NE68519, NE68533, and NE68539, each offering different package outlines such as SOT-343, SOT-23, and SOT-143 while maintaining similar core RF performance metrics.

Replacement Considerations

Direct substitutes include other parts from the NE685 family such as NE68533 or NE68539, provided the package footprint and pinout compatibility are verified. Cross-reference datasheets for specific gain and noise parameters under identical bias conditions.