NE68530-T1

Overview

The NE68530-T1 is a surface-mount NPN silicon high-frequency transistor from the California Eastern Laboratories (CEL) NE685 series. It features a gain bandwidth product of 12 GHz and a minimum noise figure of 1.5 dB at 2.0 GHz. The device operates with a collector current of up to 30 mA, a collector-emitter voltage of 6 V, and a collector-base voltage of 9 V. Total power dissipation is rated at 150 mW in free air. The component utilizes Package Outline 30 (SOT-323 style) and includes Gummel-Poon nonlinear model parameters for circuit simulation.

Feature Summary

• High gain bandwidth product suitable for frequencies up to 2.4 GHz
• Low noise figure optimized for very low voltage and low current applications
• Surface mount construction in small package formats

Applications

• Portable wireless communications
• Cellular radio applications
• Low noise amplifier stages

Procurement Notes

Verify the specific suffix T1 against the manufacturer's current documentation to confirm availability and handling requirements. The datasheet explicitly lists the base part number NE68530 as not recommended for new designs; consult the sales office for updated design guidance or alternative recommendations before finalizing procurement specifications.

Selection Notes

Select this component when designing circuits requiring a 12 GHz gain bandwidth product and a 1.5 dB noise figure at 2.0 GHz. Ensure the operating conditions remain within the 6 V collector-emitter voltage and 30 mA collector current limits. Consider the SOT-323 package outline for board space constraints and verify thermal derating curves if ambient temperatures exceed standard operating ranges.

Part Context

This component belongs to the CEL NE685 series of high-frequency NPN silicon transistors. The series offers various package outlines including SOT-23, SOT-323, and SOT-143 styles. The NE68530 specifically corresponds to Package Outline 30. Other family members include the NE68518, NE68519, NE68533, and NE68539 variants.

Replacement Considerations

The datasheet identifies the NE68530 as not recommended for new design. Verify if the NE68530-T1 is an active replacement or if the sales office recommends specific alternatives such as the NE68533 or NE68539 for new implementations.

FAQ

What is the maximum stable gain condition for the NE68530?

When the stability factor K is less than or equal to 1, the Maximum Available Gain (MAG) is undefined, and Maximum Stable Gain (MSG) values are used instead.

How is the feedback capacitance measured for this device?

The emitter terminal must be connected to the ground terminal of the 3-terminal capacitance bridge during measurement.

What is the recommended bias point for typical noise parameter characterization?

Typical noise parameters are characterized at VCE = 3 V and IC = 3 mA, though other bias points such as VCE = 1.0 V and IC = 1.0 mA are also provided in the datasheet.