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The CEL NE68539-A is a silicon NPN bipolar transistor designed for RF applications. It operates with a maximum transition frequency of 12 GHz and supports a collector-emitter voltage of 6 V. The device handles a maximum collector current of 30 mA. Typical performance metrics include a noise figure of 1.5 dB and a power gain of 13 dB at a test frequency of 2 GHz. It is housed in a compact SOT-143 package, suitable for integration into wireless communication systems requiring small form factors.
Verify the specific manufacturer source and authenticity before procurement. Confirm that the component matches the exact JEITA equivalent designation provided in official documentation. Ensure compliance with relevant environmental standards such as RoHS if required by your application specifications.
Select this component when a low-noise silicon NPN transistor is required for frequencies up to 12 GHz. Consider the 6 V collector-emitter voltage rating and 30 mA current limit against your circuit requirements. The SOT-143 package offers a balance between thermal performance and board space efficiency.
This part belongs to the family of silicon bipolar transistors manufactured by CEL (California Eastern Laboratories). These devices are engineered for RF and microwave applications, providing reliable performance in wireless connectivity solutions. The NE68539-A specifically targets markets needing compact, high-frequency amplification capabilities.
The NE68539-A is functionally equivalent to the 2SC4957 transistor. Verify pinout compatibility and electrical parameter tolerances before substituting with alternative components from other manufacturers.