NE685M03-A

Description：RF TRANS NPN 5V 12GHZ M03
Series：-

SKU:1a12e2620259 Category: Bipolar RF Transistors Brand: CEL

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Product introduction

Product Detailed Parameters

Description：RF TRANS NPN 5V 12GHZ M03
Series：-
Mfr：CEL
Package：Bulk
Transistor Type：NPN
Voltage - Collector Emitter Breakdown (Max)：5V
Frequency - Transition：12GHz
Noise Figure (dB Typ @ f)：1.5dB ~ 2.5dB @ 2GHz
Gain：-
Power - Max：125mW
DC Current Gain (hFE) (Min) @ Ic, Vce：75 @ 10mA, 3V
Current - Collector (Ic) (Max)：30mA
Operating Temperature：150°C (TJ)
Mounting Type：Surface Mount
Package / Case：SOT-623F
Supplier Device Package：M03
Grade：-
Qualification：-

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NE685M03-A

Overview

The NE685M03-A is an NPN silicon RF transistor manufactured by CEL, designed for low noise and high gain applications. It utilizes the M03 package, featuring a flat lead style and a height of 0.59 mm. Key electrical parameters include a gain bandwidth product (fT) of 12 GHz at VCE = 3 V and IC = 10 mA. The noise figure (NF) is specified as 1.5 dB at 2 GHz with VCE = 3 V and IC = 3 mA. Insertion power gain (|S21E|2) reaches 7 to 9 dB under similar conditions. Forward current gain (hFE) ranges from 75 to 140 at VCE = 3 V and IC = 10 mA. Absolute maximum ratings specify a collector-to-emitter voltage (VCEO) of 5 V, collector current (IC) of 30 mA, and total power dissipation (PT) of 125 mW.

Feature Summary

Utilizes the M03 package with a flat lead style for improved RF performance and a low profile of 0.59 mm.
Engineered for low noise and high gain requirements suitable for portable wireless communications.
Features a high gain bandwidth product of 12 GHz, supporting very low voltage and low current designs.

Applications

Portable wireless communications
Cellular radio applications

Procurement Notes

Verify the -A suffix confirms Pb-free compliance per RoHS Directive 2002/95/EC. Confirm the M03 package outline dimensions match the design footprint. Ensure operating conditions remain within the absolute maximum ratings of 5 V VCEO and 30 mA IC to prevent permanent damage. Check datasheet revision dates for updated thermal characteristics.

Selection Notes

Select this component for circuits requiring minimal footprint and low noise figures in the L-band or lower frequencies. The M03 package offers space savings compared to larger surface mount options. Verify biasing networks support the recommended 3 V supply for optimal fT and NF performance. Consider the 125 mW power dissipation limit when designing thermal management solutions.

Part Context

This part is distributed by California Eastern Laboratories (CEL), which serves as the exclusive North American agent for NEC RF, microwave, and optoelectronic semiconductors. The device corresponds to the EIAJ registered number 2SC5435. It belongs to a family of six different low-cost plastic surface mount package styles available from the manufacturer.