NE687M03-T1-A

Overview

The NE687M03-T1-A is an NPN silicon RF bipolar transistor manufactured by CEL. It utilizes the M03 surface-mount package, which features a low profile of 0.59 mm and flat leads for improved RF performance. The device is characterized by a high gain-bandwidth product with fT reaching 14 GHz at VCE = 2 V and IC = 20 mA. At 2 GHz, it provides a noise figure as low as 1.3 dB and insertion power gain up to 10 dB under specified bias conditions. Absolute maximum ratings include a collector current of 30 mA and total power dissipation of 90 mW.

Feature Summary

• Utilizes the new M03 package outline featuring a low profile and flat lead style designed for better RF performance in portable wireless applications.

Applications

• Portable wireless communications
• Cellular radio applications

Procurement Notes

Verify component authenticity through authorized distribution channels. Confirm RoHS compliance status based on the -A suffix indicating lead-free terminals. Ensure proper handling procedures are followed due to the small form factor. Review absolute maximum ratings before integration to prevent permanent damage from exceeding voltage or current limits.

Selection Notes

Select this component for designs requiring very low voltage and low current operation. The high fT specification makes it suitable for frequencies around 2 GHz. Evaluate thermal management requirements against the 90 mW power dissipation limit. Consider the M03 package dimensions during PCB layout to ensure adequate clearance and soldering accuracy.

Part Context

This part belongs to the NEC/CEL NE687 series of NPN silicon transistors. It is registered with EIAJ as number 2SC5436. The manufacturer offers this device in various low-cost plastic surface mount packages to accommodate different design constraints while maintaining consistent electrical characteristics across the family.

Replacement Considerations

Check for direct substitutes within the same package family. Verify pinout compatibility and electrical parameters such as fT and NF. Ensure the replacement supports the required operating frequency and voltage levels.