NE687M33-T3-A

Description：RF TRANS NPN 3V 12GHZ 3-MINI
Series：-

SKU:0b93be6992a3 Category: Bipolar RF Transistors Brand: CEL

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Product introduction

Product Detailed Parameters

Description：RF TRANS NPN 3V 12GHZ 3-MINI
Series：-
Mfr：CEL
Package：Tape & Reel (TR)
Transistor Type：NPN
Voltage - Collector Emitter Breakdown (Max)：3V
Frequency - Transition：12GHz
Noise Figure (dB Typ @ f)：1.5dB ~ 2dB @ 2GHz
Gain：-
Power - Max：90mW
DC Current Gain (hFE) (Min) @ Ic, Vce：70 @ 10mA, 1V
Current - Collector (Ic) (Max)：30mA
Operating Temperature：150°C (TJ)
Mounting Type：Surface Mount
Package / Case：3-SMD, Flat Leads
Supplier Device Package：3-SuperMiniMold (M33)
Grade：-
Qualification：-

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NE687M33-T3-A

Overview

The NE687M33-T3-A is an NPN silicon RF bipolar transistor manufactured by CEL. It features a 3-pin Super Lead-Less Minimold (M33) package and is designed for low-noise applications. Key electrical parameters include a collector-emitter voltage of 3.0 V, a collector current of 30 mA, and a total power dissipation of 90 mW. The device exhibits a typical noise figure of 1.5 dB at 2 GHz with a collector current of 3 mA. It offers a gain bandwidth product of 12 GHz and an insertion power gain of 9 dB under standard test conditions.

Feature Summary

Low noise performance optimized for high-frequency signal processing
High gain bandwidth product suitable for L-band operations
Compact surface-mount packaging for automated assembly

Applications

Low noise amplifier stages in communication systems
RF front-end modules requiring minimal signal degradation
L-band receiver circuits

Procurement Notes

Verify the specific ordering suffix to confirm lead-free compliance status. Confirm availability as this component may be subject to discontinuation or limited supply. Ensure electrostatic discharge precautions are observed during handling and storage to prevent device damage.

Selection Notes

Select this component when a low noise figure is critical at 2 GHz operations. Verify that the 3.0 V collector-emitter voltage rating aligns with the circuit design requirements. Consider the M33 package dimensions for PCB layout constraints and thermal management needs.

Part Context

This part belongs to the NEC/CEL family of NPN silicon RF transistors. It shares similar characteristics with other devices in the series but is distinguished by its specific pinout and package type. The manufacturer provides detailed electrical characteristics and absolute maximum ratings to assist in circuit integration.

Replacement Considerations

Check for direct substitutes within the same manufacturer's portfolio. Evaluate alternative RF transistors with comparable noise figures and gain bandwidth products if this part is unavailable.