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The NE68819-A is a surface mount NPN silicon high frequency transistor from the NE688 series, designed for low cost amplifier and oscillator applications. It features low phase noise distortion and operates at low voltages with a large absolute maximum collector current of 100 mA. The device utilizes a 19-pin package style (3 Pin Ultra Super Mini Mold). Key electrical characteristics include a gain bandwidth product (fT) of up to 4.5 GHz at VCE = 1V, IC = 3 mA, and a minimum noise figure (NFMIN) of 1.7 dB at VCE = 1 V, IC = 3 mA, f = 2.0 GHz. Forward current gain (hFE) ranges from 80 to 160 at VCE = 1 V, IC = 3 mA. Absolute maximum ratings specify a collector-to-base voltage (VCBO) of 9 V, collector-to-emitter voltage (VCEO) of 6 V, and total power dissipation (PT) of 125 mW.
Verify component authenticity by checking manufacturer markings against official datasheet specifications. Confirm package type matches the 19-pin outline. Ensure handling procedures account for ESD sensitivity as noted in the documentation. Cross-reference part numbers with authorized distributors to confirm availability and compliance status.
Select this component when low noise figures and high gain are required for RF designs. Consider the specific bias conditions for desired noise and gain performance. Evaluate thermal resistance limits for power dissipation requirements. Compare alternative package styles if footprint constraints differ from the 19-pin configuration.
The NE68819-A belongs to the NE688 series of NPN epitaxial silicon transistors manufactured by California Eastern Laboratories (CEL). This series includes multiple package variants such as the 18, 30, 33, 39, and 39R styles. The series is characterized by wide dynamic range and excellent linearity due to its low noise figures and high current capability.
Consult the manufacturer for details on recommended alternatives. The datasheet explicitly notes that other part numbers from the same series, such as NE68818, NE68839, and NE68839R, are not recommended for new design.