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Product Detailed Parameters
- Description：RF TRANS NPN 6V 5GHZ 3-MINI
- Series：-
- Mfr：CEL
- Package：Tape & Reel (TR)
- Transistor Type：NPN
- Voltage - Collector Emitter Breakdown (Max)：6V
- Frequency - Transition：5GHz
- Noise Figure (dB Typ @ f)：1.7dB ~ 2.5dB @ 2GHz
- Gain：-
- Power - Max：125mW
- DC Current Gain (hFE) (Min) @ Ic, Vce：80 @ 3mA, 1V
- Current - Collector (Ic) (Max)：100mA
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-523
- Supplier Device Package：3-SuperMiniMold (19)
- Grade：-
- Qualification：-
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Overview
The CEL NE68819-T1 is a surface mount NPN silicon high frequency transistor from the NE688 series, designed for low cost amplifier and oscillator applications. It features low phase noise distortion and operates up to 5 GHz. Key electrical parameters include a collector-emitter voltage (VCEO) of 6 V, an emitter-base voltage (VEBO) of 2.0 V, and a maximum collector current (IC) of 100 mA. The device exhibits a gain bandwidth product (fT) of 4.5 GHz at VCE=1V/IC=3mA and 9 GHz at VCE=3V/IC=20mA. Minimum noise figure is 2.5 dB at 2.0 GHz (VCE=1V, IC=3mA) and 1.5 dB at 2.0 GHz (VCE=3V, IC=7mA). Total power dissipation is 150 mW with a thermal resistance (Rth J-A) of 1000 °C/W.
Feature Summary
- Low phase noise distortion suitable for oscillator applications
- High current capability with large absolute maximum collector current
- Low noise figure performance across RF frequencies
- Low voltage operation design
Applications
- Low cost amplifier circuits
- Oscillator applications up to 5 GHz
- RF signal processing stages requiring low noise
Procurement Notes
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm datasheet revision and package outline compatibility before integration. Check for obsolescence status as older series parts may have limited availability. Ensure ESD handling procedures are followed during storage and assembly.
Selection Notes
Select based on required operating frequency and bias conditions. Compare fT and noise figure specifications against circuit requirements at specific VCE and IC points. Evaluate thermal resistance limits for power dissipation in the target enclosure. Consider package style availability if multiple variants exist within the series.
Part Context
The NE68819-T1 belongs to the NEC/CEL NE688 series of NPN epitaxial silicon transistors. This series offers six low-cost plastic surface mount package styles and chip form options. The part is engineered for wide dynamic range and excellent linearity in RF applications.
Replacement Considerations
Consult manufacturer documentation for direct substitutes. Cross-reference with other NE688 series variants like NE68818 or NE68830 if package or specific electrical tolerances differ. Verify pinout and thermal characteristics match the existing footprint.
