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The NE68833-A is a surface-mount NPN silicon high-frequency transistor from the NEC/CEL NE688 series, designed for low-cost amplifier and oscillator applications. It features low phase noise distortion and a minimum noise figure of 1.5 dB at 2.0 GHz under specific bias conditions (VCE = 3 V, IC = 7 mA). The device supports large absolute maximum collector current up to 100 mA and operates with low voltage requirements. Key electrical parameters include a gain bandwidth product ranging from 4 to 10 GHz depending on bias, forward current gain between 80 and 160, and total power dissipation of 200 mW. It is housed in the SOT-23 style package (Outline 33) and is suitable for RF applications up to 5 GHz.
Verify component authenticity through authorized channels as this part may be obsolete or discontinued. Confirm package outline 33 compatibility with PCB land patterns. Check for ESD sensitivity handling requirements during storage and assembly. Ensure supply chain documentation matches the original manufacturer specifications for quality assurance.
Select this component when low phase noise and high current drive are prioritized over ultra-low noise figures found in other series variants. Consider the SOT-23 package constraints for thermal management given the 200 mW power dissipation limit. Evaluate biasing networks to maintain the optimal noise figure and gain bandwidth product within the specified voltage and current ranges.
The NE68833-A belongs to the broader NE688 family of NPN epitaxial silicon transistors manufactured by NEC/CEL. This series offers multiple plastic surface mount package styles including SOT-143, SOT-343, and chip forms. The NE68833 specifically utilizes the Outline 33 (SOT-23 style) configuration, distinguishing it from other pinout and thermal performance variations within the same functional family.
Consult manufacturer sales offices for details on recommended alternatives as the NE688 series parts listed in the datasheet are not recommended for new design. Verify pinout compatibility and electrical parameter overlap before substituting with other NE688 variants or competing RF transistors.