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The NE696M01-A is an NPN silicon high-frequency epitaxial transistor manufactured by CEL. It operates in a 6-pin SOT-363 (M01) package with four emitter pins to minimize inductance. Key electrical parameters include a collector-to-base voltage of 9 V, collector current of 30 mA, and total power dissipation of 150 mW. The device achieves a typical transition frequency of 14 GHz at 3 V and 10 mA bias. At 2 GHz, it provides a typical noise figure of 1.6 dB and insertion power gain of 14 dB.
Verify the specific ordering suffix when sourcing components. The base part number NE696M01 corresponds to standard packaging, while the -T1 suffix indicates tape and reel delivery. The -A suffix denotes lead-free compliance per RoHS directives. Confirm availability status as distribution channels may vary for this discontinued or limited stock item.
Select this component for designs prioritizing low noise and high gain at frequencies up to 2.4 GHz. Ensure bias conditions align with datasheet recommendations for optimal noise figure and gain performance. Consider the thermal limits and absolute maximum ratings during circuit layout to prevent damage from excessive power dissipation or temperature excursions.
This transistor belongs to the NEC/CEL high-frequency silicon epitaxial transistor family. It serves as a successor or alternative to similar devices like the NE685, offering improved gain characteristics due to its unique multi-emitter package structure designed specifically for cost-effective RF front-end modules.
Direct substitutes within the same package and electrical profile should be verified against the manufacturer's cross-reference list. Compare key parameters such as transition frequency, noise figure, and package dimensions to ensure mechanical and electrical compatibility without redesigning the PCB footprint.