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The NE696M01-T1 is an NPN silicon epitaxial high-frequency transistor manufactured by CEL. It operates in a 6-pin SOT-363 package designed to minimize emitter inductance for enhanced RF performance. Key electrical specifications include a transition frequency (fT) of 14 GHz, a collector current rating of 30 mA, and total power dissipation of 150 mW. The device provides a typical noise figure of 1.6 dB and insertion power gain of 14 dB at 2 GHz. It supports a collector-to-emitter voltage of 6 V and functions within a junction temperature range of -65°C to +150°C.
Verify the specific ordering suffix when purchasing. The base part number corresponds to standard packaging, while the -T1 suffix indicates tape and reel delivery containing 3000 units per reel. Confirm RoHS compliance status based on the required environmental designation suffix before finalizing procurement orders.
Select this component for designs requiring high gain and low noise in compact form factors. Ensure biasing conditions align with the specified 3V and 10mA test parameters for optimal fT and gain characteristics. Verify that the operating frequency remains within the validated scattering parameter ranges provided in the datasheet.
This transistor belongs to the NE696 series of NPN silicon epitaxial transistors originally developed by NEC. California Eastern Laboratories (CEL) continues production as a business partner. The device serves as a successor to earlier models like the NE685, offering improved performance through its specialized multi-emitter package design.
Direct substitutes include the NE698M01, which offers similar functionality with a higher transition frequency of 17 GHz. Both devices utilize the same SOT-363 package and are suitable for comparable LNA and pre-driver applications.