NE851M03-A

Description：RF TRANS NPN 5.5V 4.5GHZ SOT-363
Series：-

SKU:e06b1fed8267 Category: Bipolar RF Transistors Brand: CEL

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Product introduction

Product Detailed Parameters

Description：RF TRANS NPN 5.5V 4.5GHZ SOT-363
Series：-
Mfr：CEL
Package：Bulk
Transistor Type：NPN
Voltage - Collector Emitter Breakdown (Max)：5.5V
Frequency - Transition：4.5GHz
Noise Figure (dB Typ @ f)：1.9dB ~ 2.5dB @ 2GHz
Gain：-
Power - Max：200mW
DC Current Gain (hFE) (Min) @ Ic, Vce：100 @ 5mA, 1V
Current - Collector (Ic) (Max)：100mA
Operating Temperature：150°C (TJ)
Mounting Type：Surface Mount
Package / Case：6-TSSOP, SC-88, SOT-363
Supplier Device Package：SOT-363
Grade：-
Qualification：-

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NE851M03-A

Overview

The NE851M03-A is an NPN silicon RF bipolar transistor manufactured by CEL, designed for low-voltage oscillator applications. It features a transition frequency (fT) of up to 4.5 GHz at VCE = 1 V and IC = 5 mA. The device supports a maximum collector current of 100 mA and a collector-emitter breakdown voltage of 5.5 V. Packaged in the SOT-363 surface-mount format, it operates within standard temperature ranges suitable for high-frequency circuit integration.

Feature Summary

NPN silicon construction optimized for RF oscillator circuits
High transition frequency capability up to 4.5 GHz
Low voltage operation with 5.5 V collector-emitter breakdown
Surface-mount SOT-363 package for compact board integration

Applications

RF oscillator circuits
Low-voltage radio frequency signal generation
High-frequency communication modules

Procurement Notes

Verify component authenticity through authorized CEL distributors or certified suppliers. Confirm datasheet revision and lot traceability upon receipt. Ensure storage conditions comply with manufacturer specifications to maintain junction integrity. Cross-reference ordering suffixes carefully, as variations may indicate different tape-and-reel configurations or testing standards without altering electrical function.

Selection Notes

Select this component when designing low-voltage RF oscillators requiring high transition frequencies. Ensure the application voltage remains below the 5.5 V collector-emitter breakdown limit. Verify that the required operating current does not exceed 100 mA. Consider thermal management requirements associated with the SOT-363 package size and power dissipation characteristics in dense PCB layouts.

Part Context

The NE851M03-A belongs to CEL's NE851 series of NPN silicon transistors. This family targets RF applications where low voltage and high speed are critical. The part shares design lineage with other NE851 variants but differs in specific packaging and electrical parameter tolerances defined by the M03 designation.