NE85618-A

Overview

The CEL NE85618 is a silicon NPN bipolar transistor designed for RF applications up to 6.5 GHz. It features a typical transition frequency (fT) of 6.5 GHz and a maximum collector-emitter voltage (VCEO) of 12 V. The device supports a maximum collector current of 100 mA and operates with a typical DC current gain (hFE) of 120 at 100 mA. Packaged in the compact SOT-343F format, it provides a noise figure of 1.1 dB and a maximum available gain of 16 dB at 1 GHz.

Feature Summary

• High-frequency operation capability suitable for RF signal processing
• Compact surface-mount package design for space-constrained layouts
• Low noise performance characteristics for sensitive receiver stages

Applications

• RF amplification circuits
• Wireless communication modules
• General-purpose high-frequency switching

Procurement Notes

Verify the specific manufacturer source when sourcing this component, as California Eastern Laboratories (CEL) products may be distributed through authorized channels or acquired via acquisition entities. Confirm that the received part matches the JEITA equivalent designation 2SC5011 to ensure functional compatibility with original design specifications.

Selection Notes

Select the NE85618 for designs requiring an NPN transistor with a 6.5 GHz transition frequency and low noise figure. Ensure the application circuit accommodates the 12 V maximum collector-emitter voltage rating and the 100 mA maximum collector current limit within the thermal constraints of the SOT-343F package.

Part Context

This component belongs to the Silicon Bipolar Transistors category within the CEL product portfolio. It is categorized alongside other single transistors optimized for RF frequencies, sharing the SOT-343F package style common to the NE856xx series for general-purpose high-frequency applications.

Replacement Considerations

The JEITA equivalent part number is 2SC5011. Verify pinout and electrical parameters against the 2SC5011 specification before substitution.