NE85619-A

Overview

The NE85619-A is a silicon NPN bipolar transistor manufactured by CEL, identified as the JEITA equivalent of the 2SC5006. It is designed for RF applications up to 4.5 GHz with a typical transition frequency (fT) of 4.5 GHz at 1 GHz test conditions. The device operates with a maximum collector-emitter voltage (VCEO) of 12 V and a maximum collector current (IC) of 100 mA. Key electrical characteristics include a typical noise figure of 1.2 dB and a typical DC current gain (hFE) of 12.5 at 1 GHz and 3 V VCE. It is housed in a compact SOT-523 package.

Feature Summary

• Silicon NPN construction optimized for high-frequency RF performance
• Low noise figure suitable for sensitive receiver front-end stages
• Compact surface-mount packaging for space-constrained designs

Applications

• RF amplification in wireless communication systems
• Low noise amplifier (LNA) stages in mobile devices
• General purpose RF signal processing circuits

Procurement Notes

Verify the specific ordering suffix 'A' against official manufacturer documentation to confirm any distinct material or process variations compared to the base NE85619 part number. Ensure compatibility with standard SOT-523 footprint requirements during component sourcing.

Selection Notes

Select this component when a low-noise silicon NPN transistor is required for frequencies up to 4.5 GHz. Compare the 1.2 dB noise figure and 100 mA current limit against application needs. Consider the SOT-523 package size for board layout constraints relative to alternative packages like SOT-343 or SOT-143.

Part Context

This component belongs to CEL's portfolio of silicon bipolar transistors, specifically the NE856xx series. These parts are engineered for RF and microwave applications, offering a balance of noise performance and power handling in small form factors. The NE85619-A serves as a direct replacement for the industry-standard 2SC5006.

Replacement Considerations

The NE85619-A is functionally equivalent to the 2SC5006. Verify pinout compatibility and thermal characteristics when substituting with other SOT-523 packaged NPN transistors from different manufacturers.