NE85630-A

NE85630-A

  • Description:RF TRANS NPN 12V 4.5GHZ SOT-323
  • Series:-

SKU:42e8bd1ca1dc Category: Brand:

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Product Detailed Parameters

  • Description:RF TRANS NPN 12V 4.5GHZ SOT-323
  • Series:-
  • Mfr:CEL
  • Package:Bulk
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):12V
  • Frequency - Transition:4.5GHz
  • Noise Figure (dB Typ @ f):1.2dB @ 1GHz
  • Gain:9dB
  • Power - Max:150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 7mA, 3V
  • Current - Collector (Ic) (Max):100mA
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SC-70, SOT-323
  • Supplier Device Package:SOT-323
  • Grade:-
  • Qualification:-

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NE85630-A

Overview

The CEL NE85630-A is a high-linearity, low-noise NPN silicon RF transistor designed for broadband applications in the VHF and UHF frequency ranges. It features a hermetically sealed surface-mount package that provides robust mechanical stability and consistent thermal performance. The device is optimized for linear amplification tasks, offering stable gain and minimal distortion across its operational bandwidth. Its construction supports reliable operation in demanding RF environments, making it suitable for communication systems requiring precise signal integrity and wideband coverage without significant performance degradation at higher frequencies.

Feature Summary

  • High linearity for accurate signal amplification
  • Low noise figure for sensitive receiver stages
  • Broadband capability covering VHF to UHF ranges
  • Hermetically sealed surface-mount construction

Applications

  • VHF/UHF broadband amplifiers
  • Wireless communication base stations
  • Test and measurement equipment front-ends
  • RF signal conditioning circuits

Procurement Notes

Verify the manufacturer datasheet for specific electrical limits and handling instructions before integration. Confirm package compatibility with your PCB footprint and reflow profile requirements. Ensure supply chain authenticity through authorized channels to guarantee device reliability and performance consistency in final assemblies.

Selection Notes

Evaluate the required operating frequency range against the transistor's specified bandwidth to ensure adequate gain and stability. Consider thermal management needs based on the expected power dissipation in your circuit design. Compare noise figures with alternative devices if ultra-low noise performance is critical for your specific application scenario.

Part Context

This component belongs to CEL's portfolio of RF transistors engineered for high-performance analog applications. The NE85630 series is characterized by its focus on maintaining signal fidelity in broadband environments. It serves as a key building block for designers needing reliable NPN amplification solutions in compact form factors for modern electronic systems.

Replacement Considerations

Consult official substitution guides or equivalent part lists from CEL for verified alternatives. Cross-reference pinouts and electrical parameters carefully when considering competitors' parts to ensure functional compatibility without redesigning the surrounding circuitry.

NE85630-ANE85630-A

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