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Product Detailed Parameters
- Description：RF TRANS NPN 12V 4.5GHZ SOT-323
- Series：-
- Mfr：CEL
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：NPN
- Voltage - Collector Emitter Breakdown (Max)：12V
- Frequency - Transition：4.5GHz
- Noise Figure (dB Typ @ f)：1.2dB @ 1GHz
- Gain：9dB
- Power - Max：150mW
- DC Current Gain (hFE) (Min) @ Ic, Vce：40 @ 7mA, 3V
- Current - Collector (Ic) (Max)：100mA
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SC-70, SOT-323
- Supplier Device Package：SOT-323
- Grade：-
- Qualification：-
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Overview
The NE85630-T1-A is an NPN silicon RF small signal bipolar transistor manufactured by CEL. It operates in the ultra-high frequency band with a transition frequency of 4.5 GHz. The device features a collector-emitter breakdown voltage of 12 V and supports a maximum collector current of 0.1 A. Packaged in a surface-mount SOT-323 (MiniMold) outline, it is designed for microwave low-noise amplification applications.
Feature Summary
- NPN epitaxial silicon construction optimized for high-frequency performance
- Designed specifically for microwave low-noise amplification circuits
- Surface-mount MiniMold package suitable for automated assembly
Applications
- Microwave low-noise amplifier stages
- Ultra-high frequency signal processing
- RF front-end modules in wireless communication systems
Procurement Notes
Verify component authenticity through authorized distribution channels as this part number is listed as obsolete. Confirm that substitute components meet specific RF performance requirements including noise figure and gain characteristics. Ensure replacement packages match the original footprint to maintain circuit board compatibility without redesign.
Selection Notes
Select based on required transition frequency and noise specifications for the target application. Consider the availability of alternative NPN transistors from the same manufacturer family if the primary model is discontinued. Evaluate thermal management needs relative to the small outline package constraints and power dissipation limits defined in the official datasheet.
Part Context
This component belongs to the NE8563x series of RF transistors produced by California Eastern Laboratories. The series includes variants such as the NE85633 and NE85634, which share similar packaging and operational principles but differ in specific electrical parameters. These devices are engineered for consistent performance in high-frequency analog and RF circuit designs.
Replacement Considerations
Public confirmed substitutes include the 2N918 PBFREE from Central Semiconductor Corp. Verify that any replacement meets the 12V breakdown and 4.5GHz transition frequency requirements.
