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The NE85630-T1-R24-A is an NPN silicon RF bipolar transistor manufactured by CEL. It is housed in a surface-mount SOT-323 (SC-70-3) package. The device features a collector-emitter breakdown voltage of 12V and a maximum collector current of 100mA. Its transition frequency is specified at 4.5GHz, supporting ultra-high frequency operations. The component is designed for low-noise amplification applications within microwave circuits.
Verify the obsolete status indicated by major distributors before procurement planning. Confirm that the SOT-323 package dimensions match the target PCB footprint. Ensure the 12V breakdown voltage rating aligns with the circuit's operational requirements to prevent device failure during acquisition and integration phases.
Select this component for designs requiring NPN RF transistors with a 4.5GHz transition frequency. The 12V collector-emitter rating defines the voltage headroom limits. Consider the SOT-323 form factor for space-constrained layouts. Evaluate noise figure specifications against system sensitivity requirements prior to final selection.
This part belongs to the NE85630 series of RF bipolar transistors from CEL. It shares the core electrical characteristics of the base NE85630 model but utilizes specific packaging and taping configurations denoted by the suffix. The series targets high-frequency analog applications requiring small-signal amplification.
Public confirmed substitute part numbers are not available in the provided documentation. Due to the obsolete status, direct replacements may require redesigning the circuit for alternative packages or verifying cross-reference data from manufacturer archives.