NE85633-R24-A

Overview

The NE85633-R24-A is an NPN epitaxial silicon RF transistor designed for microwave low-noise amplification. It utilizes a 3-pin Minimold package with Pin 1 as Emitter, Pin 2 as Base, and Pin 3 as Collector. The device operates at a maximum collector current of 100 mA and total power dissipation of 200 mW. Key electrical characteristics include a typical noise figure of 1.1 dB and a typical gain of 11 dB at VCE = 10 V, IC = 7 mA, f = 1 GHz. The R24 suffix indicates a DC current gain (hFE) classification range of 80 to 160.

Feature Summary

• Optimized for low noise and high gain performance in microwave applications
• High power gain capability suitable for amplifier stages
• Low reverse transfer capacitance for improved isolation

Applications

• Microwave low-noise amplification
• RF signal processing circuits

Procurement Notes

Verify the specific R24 hFE binning requirement against circuit design specifications before ordering. Confirm that the 3-pin Minimold package dimensions align with the target PCB footprint. Ensure electrostatic discharge precautions are observed during handling due to component sensitivity.

Selection Notes

Select this component when a low noise figure near 1.1 dB is required at 1 GHz. The R24 variant provides a moderate DC current gain range of 80 to 160. Evaluate thermal management requirements as the total power dissipation is limited to 200 mW under free air conditions.

Part Context

This part is also identified by the JEITA designation 2SC3356. It was originally developed by California Eastern Laboratories (CEL) and is now distributed by Renesas Electronics. The datasheet revision history notes updates to ordering information and hFE classifications.

Replacement Considerations

The 2SC3356 is the direct equivalent part number for the NE85633 series.