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The NE85633-R25-A is an NPN epitaxial silicon RF transistor designed for microwave low-noise amplification. It operates in a 3-pin Minimold package with Pin 1 as Emitter, Pin 2 as Base, and Pin 3 as Collector. The device features a collector-to-base voltage of 20 V, collector-to-emitter voltage of 12 V, and emitter-to-base voltage of 3.0 V. Maximum ratings include a collector current of 100 mA and total power dissipation of 200 mW at +25°C ambient temperature. The junction temperature limit is 150°C. Electrical characteristics specify a typical noise figure of 1.1 dB and gain of 11 dB at 1 GHz (VCE=10V, IC=7mA). The R25 suffix indicates a DC current gain (hFE) classification of 125 to 250.
Verify component authenticity through authorized channels due to phase-out status. Confirm the R25 suffix matches required hFE specifications for the design. Check datasheet revision history for any parameter updates prior to finalizing procurement orders.
Select this part when low noise figure and high gain are critical at 1 GHz frequencies. Ensure the operating collector current aligns with the specified 7 mA or 20 mA test conditions for optimal performance metrics. Verify thermal management capabilities to stay within the 200 mW power dissipation limit.
This component belongs to the NE85633 series manufactured by California Eastern Laboratories (CEL), now part of Renesas Electronics. It serves as a specialized RF transistor for microwave applications, distinct from general-purpose switching transistors. The model shares characteristics with the 2SC3356 equivalent.
The 2SC3356 is the direct equivalent part number for the NE85633 series. Verify pinout compatibility and electrical parameters before substitution. No other cross-model substitutes are documented in the official datasheet.