NE85633-T1B-R24-A

Overview

The NE85633-T1B-R24-A is an NPN epitaxial silicon RF transistor designed for microwave low-noise amplification. It operates in a 3-pin Minimold package with Pin 1 as Emitter, Pin 2 as Base, and Pin 3 as Collector. Key electrical characteristics include a maximum collector-to-base voltage of 20 V, a collector-to-emitter voltage of 12 V, and a total power dissipation of 200 mW at 25°C ambient temperature. The device features a typical noise figure of 1.1 dB and a gain bandwidth product of 7 GHz. The 'R24' suffix indicates a DC current gain (hFE) classification range of 80 to 160.

Feature Summary

• Optimized for low-noise performance in microwave applications
• High power gain capability at 1 GHz frequency
• Integrated thermal protection via specified junction temperature limits

Applications

• Microwave low-noise amplifier circuits
• RF front-end modules requiring high gain
• Communication systems operating at 1 GHz

Procurement Notes

Verify the specific ordering suffixes against the manufacturer's documentation to ensure correct packaging and binning. Confirm that the R24 hFE classification matches the design requirements. Check for phase-out status or alternative sourcing options if necessary. Ensure compliance with RoHS directives and handling precautions regarding electrostatic discharge sensitivity during assembly.

Selection Notes

Select this component when designing circuits that require a balance of low noise figure and high power gain at microwave frequencies. Consider the 12 V collector-to-emitter voltage limit and 200 mW power dissipation constraints for thermal management. Evaluate the hFE binning (R24) to ensure consistent amplification characteristics across production batches.

Part Context

This part belongs to the NE85633 series, originally developed by California Eastern Laboratories (CEL) and later distributed by Renesas Electronics. It serves as a specialized RF transistor for high-frequency analog signal processing. The datasheet revision history indicates updates to ordering information and hFE classifications over time.

Replacement Considerations

Consult official manufacturer documentation for direct replacements. Verify pinout compatibility and electrical parameter equivalence before substitution.

FAQ

What does the R24 suffix indicate?

The R24 suffix denotes the DC current gain (hFE) classification, specifying a range of 80 to 160.

What is the maximum allowable collector-to-base voltage?

The absolute maximum rating for collector-to-base voltage (VCBO) is 20 V.

How is the device packaged?

The NE85633-T1B is housed in a 3-pin Minimold package.