NE85633-T1B-R25-A

$1.53

Description：RF TRANS NPN 12V 7GHZ 3-MINI
Series：-

SKU:5c2930ac896f Category: Bipolar RF Transistors Brand: CEL

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Product introduction

Product Detailed Parameters

Description：RF TRANS NPN 12V 7GHZ 3-MINI
Series：-
Mfr：CEL
Package：Tape & Reel (TR)
Transistor Type：NPN
Voltage - Collector Emitter Breakdown (Max)：12V
Frequency - Transition：7GHz
Noise Figure (dB Typ @ f)：1.1dB @ 1GHz
Gain：11.5dB
Power - Max：200mW
DC Current Gain (hFE) (Min) @ Ic, Vce：50 @ 20mA, 10V
Current - Collector (Ic) (Max)：100mA
Operating Temperature：150°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-236-3, SC-59, SOT-23-3
Supplier Device Package：3-MINIMOLD
Grade：-
Qualification：-

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NE85633-T1B-R25-A

Overview

The NE85633-T1B-R25-A is an NPN epitaxial silicon RF transistor designed for microwave low-noise amplification. It operates in a 3-pin Minimold package with Pin 1 as Emitter, Pin 2 as Base, and Pin 3 as Collector. Key electrical characteristics include a typical noise figure of 1.1 dB and a gain bandwidth product of 7 GHz at VCE = 10 V and IC = 20 mA. The device supports a maximum collector current of 100 mA and total power dissipation of 200 mW. The suffix R25 indicates an hFE classification range of 125 to 250.

Feature Summary

Optimized for low noise and high gain performance in microwave applications
High power gain capability suitable for amplifier stages
Integrated thermal protection via junction temperature rating

Applications

Microwave low-noise amplification circuits
RF front-end modules requiring minimal signal degradation
Communication systems operating at 1 GHz frequencies

Procurement Notes

Verify the specific ordering suffixes against the manufacturer's datasheet to ensure correct packaging and binning. Confirm that the R25 marking corresponds to the required DC current gain (hFE) range of 125 to 250 for your design specifications. Check for phase-out status or alternative sourcing options if necessary.

Selection Notes

Select this component when designing circuits prioritizing low noise figures around 1.1 dB at 1 GHz. Ensure biasing conditions align with the recommended VCE of 10 V and IC ranges between 5 mA and 20 mA for optimal performance. Consider the 3-pin Minimold package constraints for PCB layout and thermal management.

Part Context

This part belongs to the NE85633 series, originally developed by California Eastern Laboratories (CEL) and later associated with Renesas Electronics. It serves as a specialized RF transistor for high-frequency analog applications where signal integrity and low noise are critical parameters.

Replacement Considerations

The datasheet lists the equivalent part number 2SC3356-T1B. Verify pinout compatibility and electrical parameter matching before substitution. No other direct replacements are documented in the provided source material.