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The NE85633-T1B is an NPN epitaxial silicon RF transistor designed for microwave low-noise amplification. It operates in a 3-pin Minimold package with Pin 1 as Emitter, Pin 2 as Base, and Pin 3 as Collector. Key electrical characteristics include a maximum collector-to-emitter voltage (VCEO) of 12 V, a maximum collector current (IC) of 100 mA, and a total power dissipation (Ptot) of 200 mW at +25°C. The device exhibits a typical noise figure (NF) of 1.1 dB and a typical gain bandwidth product (fT) of 7 GHz at VCE = 10 V.
Verify the specific ordering suffix to confirm packaging details. The -T1B designation indicates tape-and-reel packaging containing 3,000 pieces per reel. Ensure the component meets RoHS standards if required by the manufacturing process. Confirm that the supplier provides official datasheets matching the manufacturer's specifications before finalizing procurement.
Select this component when designing circuits that require a low noise figure around 1.1 dB and high gain at 1 GHz frequencies. Ensure the operating conditions stay within the 12 V collector-to-emitter voltage limit and the 200 mW power dissipation threshold. Consider the thermal management requirements based on the free-air ambient temperature ratings provided in the absolute maximum ratings section.
This part is manufactured by CEL (California Eastern Laboratories), which is now a business partner of Renesas Electronics Corporation. The device corresponds to the JEITA part number 2SC3356. It belongs to a family of NPN silicon RF transistors optimized for microwave frequency operations, specifically targeting low-noise amplifier designs where signal integrity is critical.
The 2SC3356-T1B-A is listed as a compatible alternative or equivalent part number within the same series. Verify pinout compatibility and electrical parameter alignment before substitution.