NE85634-T1-RE-A

Overview

The NE85634-T1-RE-A is an NPN silicon RF bipolar transistor manufactured by CEL. It operates with a collector-emitter voltage of 12V and a maximum collector current of 100mA. The device supports frequencies up to 6.5GHz and dissipates 1.2W of power. It is housed in a surface-mount SOT-89 package.

Feature Summary

• NPN silicon construction for high-frequency RF applications
• Surface-mount SOT-89 packaging for compact integration
• Operational capability up to 6.5GHz frequency range

Applications

• RF amplifier circuits
• High-frequency signal processing modules
• Wireless communication transceivers

Procurement Notes

Verify the specific suffix 'RE-A' against official CEL documentation to confirm reel packaging specifications and exact electrical tolerances. Ensure the component matches the required SOT-89 footprint and thermal characteristics for the intended design. Cross-reference datasheet parameters for 1.2W dissipation limits.

Selection Notes

Select this component for designs requiring NPN RF performance at 6.5GHz with 12V biasing. Consider the 100mA current limit and 1.2W power dissipation when designing heat management solutions. Verify compatibility with SOT-89 mounting processes and ensure the RE-A variant meets specific supply chain requirements.

Part Context

This part belongs to the CEL NE85634 series of bipolar RF transistors. It shares the core NPN silicon technology and SOT-89 form factor with variants like the NE85634-T1, differing primarily in packaging configuration and specific manufacturer lot codes associated with the RE-A designation.

Replacement Considerations

The NE85634-T1 is a related variant within the same product family. Verify if the standard T1 packaging satisfies the application needs, as both share identical electrical ratings including 12V, 100mA, and 6.5GHz operation.