NE85634-T1

Overview

The CEL NE85634-T1 is an NPN silicon ultra-high frequency low-noise transistor designed for VHF, UHF, and CATV applications. It features a maximum collector-emitter voltage of 12V, a maximum collector current of 0.1A, and a characteristic frequency of 6.5GHz. The device exhibits a minimum noise figure of 1.1dB and a power gain of up to 9.0dB. With a maximum power dissipation of 1.2W and a thermal resistance of 62.5°C/W, it operates within a junction temperature range of -65°C to 150°C. Common packages include SOT-89 and SOT-23.

Feature Summary

• High power gain and low noise characteristics suitable for sensitive RF front ends
• Large dynamic range with ideal current characteristics
• Surface mount design utilizing plastic encapsulation

Applications

• Low noise amplifiers in VHF and UHF bands
• CATV frequency band circuits
• FM microphone high-frequency broadband circuits

Procurement Notes

Verify the specific manufacturer origin as multiple vendors produce this component type. Confirm package compatibility and electrical parameter tolerances against original NEC or Renesas specifications before integration into final designs.

Selection Notes

Select based on required noise figure and operating frequency constraints. Ensure thermal management meets the specified power dissipation limits. Verify that the chosen package variant aligns with PCB layout requirements and mounting capabilities.

Part Context

Originally manufactured by NEC Electronics Corporation, which later merged with Renesas Technology Corporation. The part remains available through various manufacturers including CEL, providing continuity for legacy designs requiring these specific RF performance metrics.

Replacement Considerations

Public confirmed substitute part numbers include RF贴片NE85634-F.