NE85639R-T1-A

NE85639R-T1-A

  • Description:RF TRANS NPN 12V 9GHZ SOT-143R
  • Series:-

SKU:fc8975b4744c Category: Brand:

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Product Detailed Parameters

  • Description:RF TRANS NPN 12V 9GHZ SOT-143R
  • Series:-
  • Mfr:CEL
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):12V
  • Frequency - Transition:9GHz
  • Noise Figure (dB Typ @ f):1.5dB ~ 2.1dB @ 1GHz
  • Gain:13.5dB
  • Power - Max:200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce:50 @ 20mA, 10V
  • Current - Collector (Ic) (Max):100mA
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SOT-143R
  • Supplier Device Package:SOT-143R
  • Grade:-
  • Qualification:-

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NE85639R-T1-A

Overview

The NE85639R-T1-A is a surface-mount RF NPN epitaxial planar transistor manufactured by CEL (Comlinear). Designed for high-frequency applications, this component operates within the S-band and C-band frequency ranges. It features a lead-free RoHS-compliant plastic package, specifically the SOT-343 form factor with four terminals. The device is engineered to provide stable amplification in wireless communication systems, offering reliable performance under standard operating conditions defined by its electrical characteristics.

Feature Summary

  • Surface-mount construction for automated assembly processes
  • RoHS compliant lead-free plastic packaging
  • Optimized for linear amplification in RF circuits

Applications

  • Wireless local loop (WLL) base stations
  • Point-to-point microwave radio links
  • Broadband access equipment

Procurement Notes

Verify the complete part number including suffixes against official manufacturer documentation before ordering. Confirm that the specific revision matches project requirements. Ensure storage and handling procedures adhere to moisture sensitivity level ratings specified in the datasheet to prevent package damage during soldering.

Selection Notes

Evaluate the maximum operating frequency and power output requirements of the target circuit against the device specifications. Consider thermal management solutions suitable for the small outline package. Compare noise figure and gain parameters with alternative components to ensure compatibility with system signal integrity standards.

Part Context

This transistor belongs to CEL's portfolio of RF power devices intended for infrastructure communications. It complements other SMD transistors in the series designed for similar frequency bands. The component supports the transition from through-hole to surface-mount technologies in modern telecommunications hardware manufacturing.

Replacement Considerations

Consult official substitution guides for direct equivalents. Verify pinout compatibility and thermal resistance values when considering cross-brand alternatives. Ensure that any substitute component meets the same regulatory compliance standards.

NE85639R-T1-ANE85639R-T1-A

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